si2312ds vishay siliconix new product document number: 71338 s-21090?rev. c, 01-jun-02 www.vishay.com 1 n-channel 20-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.033 @ v gs = 4.5 v 4.9 20 0.040 @ v gs = 2.5 v 4.4 0.051 @ v gs = 1.8 v 3.9 g s d top view 2 3 to-236 (sot-23) 1 si2312ds (c2)* *marking code absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 sec steady state unit drain-source voltage v ds 20 gate-source voltage v gs 8 v t a = 25 c 4.9 3.77 continuous drain current (t j = 150 c) a t a = 70 c i d 3.9 3.0 pulsed drain current b i dm 15 a avalanche current b i as 15 single avalanche energy l = 0.1 mh e as 11.25 mj continuous source current (diode conduction) a i s 1.0 a t a = 25 c 1.25 0.75 power dissipation a t a = 70 c p d 0.80 0.48 w operating junction and storage temperature range t j , t stg ?55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 5 sec 75 100 maximum junction-to-ambient a steady state r thja 120 166 c/w maximum junction-to-foot steady state r thjf 40 50 c/w notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature
si2312ds vishay siliconix new product www.vishay.com 2 document number: 71338 s-21090 ? rev. c, 01-jun-02 specifications (t a = 25 c unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v( br)dss v gs = 0 v, i d = 250 a 20 gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 0.65 0.85 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = 16 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 70 c 75 a on-state drain current a i d(on) v ds 10 v, v gs = 4.5 v 15 a v gs = 4.5 v, i d = 5.0 a 0.027 0.033 drain-source on-resistance a r ds(on) v gs = 2.5 v, i d = 4.5 a 0.033 0.040 ds(on) v gs = 1.8 v, i d = 4.0 a 0.042 0.051 forward transconductance a g fs v ds = 15 v, i d = 5.0 a 40 s diode forward voltage v sd i s = 1.0 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 11.2 14.0 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 5.0 a 1.4 nc gate-drain charge q gd ds gs d 2.2 switching turn-on delay time t d(on) 15 25 rise time t r v dd = 10 v, r l = 10 40 60 turn-off delay time t d(off) v dd = 10 v, r l = 10 i d 1.0 a, v gen = 4.5 v, r g = 6 48 70 ns fall-time t f 31 45 source-drain reverse recovery time t rr i f = 1.0 a, di/dt = 100 a/ s 13 25 notes a. pulse test: pw 300 s duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 0 3 6 9 12 15 01234 v gs = 4.5 thru 2.0 v t c = 125 c ? 55 c 1.5 v 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 1.0 v 0.5 v
si2312ds vishay siliconix new product document number: 71338 s-21090 ? rev. c, 01-jun-02 www.vishay.com 3 typical characteristics (25 c unless noted) ? on-resistance ( r ds(on) ) 0 300 600 900 1200 1500 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 2 4 6 8 0 4 8 12 16 20 0.00 0.03 0.06 0.09 0.12 0.15 03691215 v ds ? drain-to-source voltage (v) c oss c iss v ds = 10 v i d = 5.0 a i d ? drain current (a) v gs = 4.5 v i d = 5.0 a v gs = 1.8 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.05 0.10 0.15 0.20 02468 i d = 5.0 a 20 1 0.01 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s 0.1 t j = 150 c t j = 25 c v gs = 2.5 v v gs = 4.5 v c rss 10
si2312ds vishay siliconix new product www.vishay.com 4 document number: 71338 s-21090 ? rev. c, 01-jun-02 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 0.01 0 1 10 12 4 6 100 600 0.1 single pulse power time (sec) 2 8 power (w) ? 0.4 ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) v gs(th) t j ? temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 166 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 t a = 25 c
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